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www.kersemi.com 1 12/2/04 IRFR12N25DPBF irfu12n25dpbf smps mosfet hexfet power mosfet v dss r ds(on) max i d 250v 0.26 ? 14a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 14 i d @ t c = 100c continuous drain current, v gs @ 10v 9.7 a i dm pulsed drain current 56 p d @t c = 25c power dissipation 144 w linear derating factor 0.96 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 9.3 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings d-pak irfr12n25d i-pak irfu12n25d high frequency dc-dc converters lead-free benefits applications low gate-to-drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current parameter typ. max. units r jc junction-to-case ??? 1.04 r ja junction-to-ambient (pcb mount)* ??? 50 c/w r ja junction-to-ambient ??? 110 thermal resistance pd - 95353a
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parameter min. typ. max. units conditions g fs forward transconductance 6.8 ??? ??? s v ds = 25v, i d = 8.4a q g total gate charge ??? 23 35 i d = 8.4a q gs gate-to-source charge ??? 5.8 8.7 nc v ds = 200v q gd gate-to-drain ("miller") charge ??? 12 19 v gs = 10v, t d(on) turn-on delay time ??? 9.1 ??? v dd = 125v t r rise time ??? 25 ??? i d = 8.4a t d(off) turn-off delay time ??? 16 ??? r g = 6.8 ? t f fall time ??? 9.2 ??? v gs = 10v c iss input capacitance ??? 810 ??? v gs = 0v c oss output capacitance ??? 130 ??? v ds = 25v c rss reverse transfer capacitance ??? 22 ??? pf ? = 1.0mhz c oss output capacitance ??? 1100 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 50 ??? v gs = 0v, v ds = 200v, ? = 1.0mhz c oss eff. effective output capacitance ??? 130 ??? v gs = 0v, v ds = 0v to 200v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 250 mj i ar avalanche current ??? 8.4 a e ar repetitive avalanche energy ??? 14 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 8.4a, v gs = 0v t rr reverse recovery time ??? 140 ??? ns t j = 25c, i f = 8.4a q rr reverse recoverycharge ??? 710 ??? nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 14 56 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 250 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.29 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.26 ? v gs = 10v, i d = 8.4a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 200v, v gs = 0v ??? ??? 250 v ds = 160v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v i gss i dss drain-to-source leakage current
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 20s pulse width tj = 175c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 5.0 7.0 9.0 11.0 13.0 15.0 v gs , gate-to-source voltage (v) 0.01 0.10 1.00 10.00 100.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 15v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 14a
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fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 5 10 15 20 25 0 2 5 7 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 8.4a v = 50v ds v = 125v ds v = 200v ds 0.01.02.03.0 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
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fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 3 6 9 12 15 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
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q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 110 220 330 440 550 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.4a 5.9a 8.4a
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

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12 in the assembly line "a" as s emb led on ww 16, 1999 example: wit h as s e mb l y this is an irfr120 lot code 1234 year 9 = 199 9 dat e code week 16 part number logo international rect ifier assembly lot code 916a irf u120 34 year 9 = 1999 dat e code or p = designates lead-free product (optional) note: "p" in assembly line position i ndi cates "l ead- f r ee" 12 34 week 16 a = assembly site code part number irfu120 line a logo lot code assembly int ernational rectifier
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as s e mb l y example: wi t h as s e mb l y this is an irfu120 ye ar 9 = 199 9 dat e code line a we e k 1 9 in the as sembly line "a" as s embled on ww 19, 1999 lot code 5678 part number 56 irf u120 int ernational logo rectifier lot code 919a 78 note: "p" in ass embly line position indicates "lead-free" 56 78 as s e mb l y lot code rectifier logo int er nat ional irf u120 part number we e k 19 dat e code year 9 = 1999 a = as s e mb l y s i t e code p = des ignat e s lead-fre e product (opt ional)
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repetitive rating; pulse width limited by max. junction temperature. i sd 8.4a, di/dt 150a/s, v dd v (br)dss , t j 175c
starting t j = 25c, l = 7.1mh r g = 25 ? , i as = 8.4a. pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss * when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters ( inches ). 3 . outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

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